Department: Science Solutions Division
Phone:
+81-3-5281-5310
Three-dimensional (3D) analysis is available for a sequence of processes in the electron beam lithography (EBL) from exposure through to post-exposure bake in consideration of generation/diffusion of acids and development. The analysis can include the LER (Line, Edge and Roughness) analysis and process condition optimization analysis.
Flow of simulation with FabMeister-EL
This simulation provides energy deposition profile due to the electron scattering in a substance exposed to electron beams. Depending on the application need, either simulation method may be selected, Direct Monte Carlo (DMC) or Normal Monte Carlo (NMC).
Definition of area for extraction of EID
Energy deposition profile function
Automated extraction of EID function
Based on the energy deposition profile obtained by the exposure simulation using NMC or DMC, phenomena of generation, dissipation and diffusion of acids are analyzed and converted into development rate through various development models including chemically amplified resist (CAR). Instead of considering the acid generation and diffusion, any simplified energy diffusion model may be used.
Calculated result of development
Based on the 3D development rate profile, 3D simulation of development using the network method and 2D simulation of development using any string model can be implemented. These simulations allow displaying of 3D birds-eye representation of simulated developments and various distance measurements on 2D cross sections.
Calculated result of 2D simulation of development
Point-to-point distance measurement
Calculated result of 3D simulation of development
Allows the optimized calculation to automatically determine an optimum dosage value for the target pattern dimensions, and batch processing calculation to implement convoluted calculations, development -rate conversions, and development calculation with two varying parameters
Offers a lithography analysis to directly expose electron beams to a resist without passing through the mask pattern
Determines proximity effect correction factors automatically based on the dose modify method
Department:Science Solutions Division
TEL:+81-3-5281-5310
