Department: Science Solutions Division
Phone:
+81-3-5281-5310
The backscattered electron Simulator "FabMeister-ER" allows calculation of generation and emission of backscattered/secondary electrons caused by the irradiation of electron beams to the surface of a substance, and resultant determination of the energy spectrum, position/angle distribution, and signal intensity of the emitted electrons. In addition, it can analyze the phenomenon of electrification (charge up) by using the analytical functions for charge up and electric charge diffusion, and thus it allows tracking of changes over time in potential distribution and electric charge distribution in a sample exposed to continuous irradiation of electrons.
When electron beams are irradiated to any stepped geometry or sample that has any internal structure, backscattered/secondary electrons can be determined. Dependency between beam blur and signal waveform may also be identified by using the algorithm configured with a combination of single-spot dosing and superimposed calculations.
The phenomenon of electrification (charge up) and the diffusion of electric charges from a sample exposed to electron beams can be analyzed. Changes over time in potential distribution and electric charge distribution in the sample and other parameters can be traced.
Scattering of the high-energy electrons given an acceleration voltage in the order of MeV can be analyzed.
Department:Science Solutions Division
TEL:+81-3-5281-5310
