Department: Science Solutions Division
Phone:
+81-3-5281-5310
The 3D SEM/STEM analysis simulator "FabMeister-EB" scans electron beams on a sample that has a three-dimensional structure, predicts and analyzes the SEM micrographs in consideration of possible generation of secondary electrons from the sample and changes in potential due to the charge up of the sample, and predicts and analyzes the scattering contrast micrographs with TEM or STEM.
The simulation may be implemented taking into consideration the electrification effect (charge up) caused by the irradiation of electron beams. It will contribute to identify the mechanisms of negative/positive reversal in SEM micrographs and distortion of SEM micrographs, the process of formation of electropositive/electronegative areas in the vicinity of the surface, re-allocation of secondary electrons, and comparison between secondary electron micrographs and backscattered electron micrographs.
This simulation allows prediction/analysis of scattering contrast micrographs on TEM or STEM. It helps optimize the sample conditions for optimum contrast (component chemical elements, dimensions), irradiating e-beam conditions (electron energy, beam current) and detector conditions (detecting angle, detector geometry), and also helps analyze the EELS and EFTM.
Department:Science Solutions Division
TEL:+81-3-5281-5310
