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Department: Science Solutions Division

Phone:
+81-3-5281-5311

Manufacturing Solutions Overview
Electron Beam Scattering Simulator
3D Anisotropic-Etching Simulator FabMeister-ES
Ion Implantation Simulator FabMeister-IM
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SimulatorIon Implantation Simulator FabMeister®-IM

FabMeister-IM is a calculation tool of the impurities distribution after the ion implantation that a device process developer can use easily

Orverview

FabMeister-IM is a calculation tool of the impurities distribution. Impurity distribution analysis technique developed by Fujitsu Laboratories Ltd. FabMeister-IM extracts parameters of the analytical function from SIMS data and predict impurities distribution accurately in arbitrary ion implantation conditions. More highly precise ion implantation distribution can get compare with the simulation results such as TRIM(SRIM). Monte Carlo simulation can also use.

FabMeister-IM

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Benefits

  • Two calculation models:Extract parameter from SIMS data and Monte Carlo simulation.
  • Stored about 1,000 SIMS data.
  • Display thickness of amorphous layer formed by ion implantation and also calculate diffusion.
  • Calculate two dimensional distribution under mask domains such as gate or contact pattern.
  • Extended Lindhard-Scharff-Schiott(LSS) theory provides the same accuracy profile as MC simulation in a shorter time.
  • Simple operability on Windows.

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Specifications

Model parameter from SIMS data Monte Carlo simulation
substrate material Si any
calculation models tail function, Dual Pearson Monte Carlo, Quasi Crystal Extended LSS
ion Ar,As,B,BF2,C,F,Ge,In,N,P,Sb,S all
substrate type Si, poly-Si, a-Si, oxide, HFO2, a-Ge, c-Ge Mo, NiSi, Resist all
cover oxide(*) 0-10nm none
dose(*) 1e10-5e15 cm² any
energy(*) 0.5-2,000keV any
Rotation(*) 0-45o any
Tilt 0-7o any

(*)Ranges are different by implantation ion

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Result Examples

Boron（Si,10keV,1e15 cm-2） as impla and after anneal As（Si,10keV,1e15cm-2）*gray area is amorphous layer
Boron（Si,10keV,1e15 cm-2） as impla and after anneal As（Si,10keV,1e15cm-2）*gray area is amorphous layer

As implantation through mask（mask width：0.1um,10keV,1E15cm-2）
As implantation through mask（mask width：0.1um,10keV,1E15cm-2）

Cu distribution in Silicone calculate by Monte Carlo Method
Cu distribution in Silicone calculate by Monte Carlo Method

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Requirements

OS：Microsoft® Windows® 2000、Microsoft® Windows® XP
Web browser：Microsoft® Internet Explorer

  • *FabMeister is a registered trademark of Mizuho Information & Research Institute, Inc.
  • *Microsoft® Windows®、Microsoft® Internet Explorer are registered trademarks Microsoft Corporation.

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Contact

Department:Science Solutions Division
TEL:+81-3-5281-5311

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