Simulator3D Anisotropic-Etching Simulator FabMeister-ESEtching rate database ODETTE*

• System Configuration
• Method for calculation of 3D etching profile
• Etching rate database ODETTE*
• Simulation Results

Etching rates over all orientations of the crystal were measured and evaluated for each etching condition. Next figures show examples of the crystal orientation dependence of the etching rate measured from the shape change of the hemispherical surface after etching.

* ODETTE has been developed by Professor Sato of Nagoya University.

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