3D Anisotropic-Etching Simulator FabMeister-ES
System Configuration
- System Configuration
- Method for calculation of 3D etching profile
- Etching rate database ODETTE*
- Simulation Results
Figure:GUI of MICROCAD
Mask Layout Editor
Mask layout data is described by using the GDS-II format in the system. When the user's mask layout CAD outputs the mask layout data by using the GDS-II format, the data can be connected to this system.
Etching Condition
It is possible to carry out 3D profile calculations to the advanced etching that is still in progress after penetration of the wafer. For instance, it is possible to analyze the process in which masks are placed on the both side of the wafer, and the etching such as penetrating the wafer.
3D Viewer
The investigation of the analysis results is supported by the output based on various display methods such as cross-section figure, wire frame figure, and etching rate stereo display.
Contact
Department:Science Solutions Division
TEL:+81-3-5281-5310
